Via etch method for back contact multijunction solar cells

US10090420B2 · kind B2 · utility

Assignee

• SOLAR JUNCTION CORPORATION · US

Inventors

• Ewelina Natalia Lucow · Los Gatos, US
• Lan Zhang · Beijing, CN
• Sathya Chary · San Francisco, US
• Ferran Suarez · Chandler, US

Key dates

• Filing date: Oct 24, 2016
• Grant date: Oct 2, 2018
• Expiry date: Oct 24, 2036

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/548

Abstract

This disclosure relates to semiconductor devices and methods for fabricating semiconductor devices. Particularly, the disclosure relates to back-contact-only multijunction solar cells and the process flows for making such solar cells, including a wet etch process that removes semiconductor materials non-selectively without major differences in etch rates between heteroepitaxial III-V semiconductor layers.