Laser diode enhancement device
US10090639B2 · kind B2 · utility
0Cited by
4References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 20, 2017 |
| Grant date | Oct 2, 2018 |
| Priority date | — |
| Expiry date | Jan 20, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/04
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The subject invention includes a semiconductor laser with the laser having a DBR mirror on a substrate, a quantum well on the DBR mirror, and an interior CGH with a back propagated output for emitting a large sized Gaussian and encircling high energy. The DBR mirror has a plurality of GaAs/AlGaAs layers, while the quantum well is composed of AlGaAs/InGaAs. The CGH is composed of AlGaAs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.