Photomask and method of forming fine pattern using the same
US10095103B2 · kind B2 · utility
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18Claims
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Key dates
| Filing date | Mar 27, 2015 |
| Grant date | Oct 9, 2018 |
| Priority date | — |
| Expiry date | Jan 6, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/203
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A photomask is provided. A photomask, comprising: a transparent substrate; and a plurality of filter layers disposed on the transparent substrate, wherein the filter layers include a first filter layer, which selectively transmits first-wavelength light therethrough, and a second filter layer, which selectively transmits second-wavelength light therethrough.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.