Semiconductor device and method of fabricating the same
US10096520B2 · kind B2 · utility
4Cited by
7References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 28, 2016 |
| Grant date | Oct 9, 2018 |
| Priority date | — |
| Expiry date | Dec 28, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/10
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a semiconductor device having a first region, a second region, and a third region between the first and second regions includes forming first and second preliminary active patterns protruding from a substrate in the first and second regions, respectively, forming mask patterns exposing the third region on the substrate, performing a first etching process using the mask patterns an etch mask to form first and second active patterns, respectively, and forming gate structures on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.