Method for thin-film via segments in photovoltaic device
US10096731B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 26, 2015 |
| Grant date | Oct 9, 2018 |
| Priority date | — |
| Expiry date | Jan 26, 2035 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
A method for vias and monolithic interconnects in thin-film optoelectronic devices (100, 200) wherein at least one line segment via hole (163, 165, 165′, 167) is formed by laser drilling and passes through front-contact layers (150, 152, 154, 156, 158) and semiconductive active layer (130), and wherein laser drilling causes forming a CIGS-type wall (132, 134, 136, 138) of electrically conductive permanently metalized copper-rich CIGS-type alloy at the inner surface (135) of the via hole, thereby forming a conductive path between at least a portion of front-contact and a portion of back-contact layers (120, 124, 126, 128, 129), forming a bump-shaped raised portion (155) at the surface of the front-contact layer, forming a raised portion (125, 127, 127′) of the back-contact layer, and optionally forming a raised portion of copper-rich CIGS-type alloy (155′) covering a portion of the front-contact layer (150). A thin-film CIGS device comprises at least one line segment via hole obtainable by the method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.