Photodetector using bandgap-engineered 2D materials and method of manufacturing the same
US10096735B2 · kind B2 · utility
2Cited by
3References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 4, 2017 |
| Grant date | Oct 9, 2018 |
| Priority date | — |
| Expiry date | Aug 4, 2037 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/547
Abstract
A photodetector includes an insulating layer on a substrate, a first graphene layer on the insulating layer, a 2-dimensional (2D) material layer on the first graphene layer, a second graphene layer on the 2D material layer, a first electrode on the first graphene layer, and a second electrode on the second graphene layer. The 2D material layer includes a barrier layer and a light absorption layer. The barrier layer has a larger bandgap than the light absorption layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.