Method for lithographic patterning of organic layers

US10096776B2 · kind B2 · utility

Assignee

• FUJIFILM Corporation · JP

Inventors

• Pawel Malinowski · Overijse, BE
• Atsushi Nakamura · Zwijndrecht, BE
• Yu Iwai · Shizuoka, JP

Key dates

• Filing date: Feb 25, 2016
• Grant date: Oct 9, 2018
• Expiry date: Feb 25, 2036

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50

Abstract

A method is provided for photolithographic patterning of an organic layer, comprising: providing a shielding layer on the organic layer; providing a photoresist layer on the shielding layer; illuminating the photoresist layer through a shadow mask; developing the photoresist layer, thereby forming a patterned photoresist layer; performing a first dry etching step using the patterned photoresist layer as a mask, thereby removing at least an upper portion of the photoresist layer and completely removing the shielding layer at locations not covered by the photoresist layer; performing a second dry etching step using the patterned shielding layer as a mask, thereby removing the organic layer at locations not covered by the shielding layer; and removing the shielding layer, wherein removing the shielding layer comprises exposing it to water. A method of the present disclosure may advantageously be used in a process for fabricating organic semiconductor based devices and circuits.