Radio frequency switch with low oxide stress
US10097171B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 24, 2015 |
| Grant date | Oct 9, 2018 |
| Priority date | — |
| Expiry date | Jul 24, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K17/693
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A RF switch circuit includes a voltage divider circuit and a semiconductor device. The semiconductor device has an activated state and a deactivated state. The voltage divider circuit has an input terminal connected to a first line and an output terminal connected to a second line. The first line is connected to a power source. A gate terminal of the semiconductor device is connected to the second line. In the activated state, a source terminal and a drain terminal of the semiconductor device are each selectively connected to ground. In the deactivated state, the source terminal and the drain terminal of the semiconductor device are each selectively connected to the power source.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.