Chemical mechanical polishing (CMP) apparatus and method
US10099339B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 2, 2016 |
| Grant date | Oct 16, 2018 |
| Priority date | — |
| Expiry date | Dec 2, 2036 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB24B37/20
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A chemical mechanical polishing apparatus includes a polishing zone having a wafer entrance and a wafer exit, first wafer platform, polishing module, slurry injection module, polishing cleaning module, and film-thickness measuring module. The first wafer platform includes a wafer loading region, and is able to move from the wafer entrance to the wafer exit along a first direction. The polishing module is located in the polishing zone, including a polishing belt extended along a second direction perpendicular to the first direction and is able to move along the second direction. The slurry injection module is configured for injecting slurry towards a wafer to-be-polished by the polishing module. The polishing cleaning module is located on one side of the polishing module along the first direction for cleaning the wafer. The film-thickness measuring module is located on another side of the polishing module along the first direction for measuring the thickness of the wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.