Methods for reducing the erosion rate of a crucible during crystal pulling
US10100428B2 · kind B2 · utility
0Cited by
4References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 17, 2015 |
| Grant date | Oct 16, 2018 |
| Priority date | — |
| Expiry date | Sep 1, 2035 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/06
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Production of silicon ingots in a crystal puller that involve reduction of the erosion rate at the crucible contact point are disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.