High throughput chemical vapor deposition electrode
US10100439B2 · kind B2 · utility
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11Claims
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Inventor
Key dates
| Filing date | May 2, 2016 |
| Grant date | Oct 16, 2018 |
| Priority date | — |
| Expiry date | Jul 14, 2036 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Processes and systems to fabricate high throughput, low cost tubular polysilicon feed rods, which can be used as direct feedstock to grow a crystalline silicon material, are disclosed. In an example, a chemical vapor deposition (CVD) process includes depositing polysilicon on a tubular electrode to form a tubular polysilicon feed rod. The tubular polysilicon feed rod may be melted in a float zone process to grow the single-crystalline silicon material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.