Patent · US Active

On-chip reference electrode for biologically sensitive field effect transistor

US10101295B2 · kind B2 · utility

4Cited by
11References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 21, 2016
Grant dateOct 16, 2018
Priority date
Expiry dateJan 19, 2037

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D30/67
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A semiconductor device including a biosensor with an on-chip reference electrode embedded within the semiconductor device, and associated manufacturing methods are provided. In some embodiments, a pair of source/drain regions is disposed within a device substrate and separated by a channel region. An isolation layer is disposed over the device substrate. A sensing well is disposed from an upper surface of the isolation layer overlying the channel region. A bio-sensing film is disposed along the upper surface of the isolation layer and extended along sidewall and lower surfaces of the sensing well. A reference electrode is disposed vertically between the bio-sensing film and the isolation layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.