Methods of forming material layer
US10103026B2 · kind B2 · utility
1Cited by
8References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 3, 2016 |
| Grant date | Oct 16, 2018 |
| Priority date | — |
| Expiry date | Aug 3, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/024
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of forming a material layer includes providing a substrate into a reaction chamber, providing a source material onto a substrate, the source material being a precursor of a metal or semimetal having a ligand, providing an ether-based modifier on the substrate, purging an inside of the reaction chamber, and reacting a reaction material with the source material to form the material layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.