Manufacturing method of semiconductor device
US10103033B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 15, 2017 |
| Grant date | Oct 16, 2018 |
| Priority date | — |
| Expiry date | Sep 15, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B41/42
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An object of the present invention is to provide a semiconductor device including a film to be processed having a uniform height. A first coating film made of photosensitive material is formed so as to cover step parts and to become thicker in a central part of a semiconductor substrate in planar view and to become thinner in an outer peripheral part. Next, a first pattern part located on the central part side relative to the step parts and a second pattern part located on the outer peripheral part side relative to the step parts are formed. The first pattern part and the second pattern part are formed so that the occupied area of the first pattern part in planar view becomes smaller than that of the second pattern part in planar view. Next, the first pattern part and the second pattern part are sagged by heating. Next, a second coating film is formed by spin coating so as to cover the step parts.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.