Semiconductor device and method for fabricating the same
US10103152B2 · kind B2 · utility
3Cited by
4References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 27, 2017 |
| Grant date | Oct 16, 2018 |
| Priority date | — |
| Expiry date | Jun 27, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/488
Abstract
A Semiconductor device and method for fabricating the same are provided. The method includes forming a trench in a substrate, forming a lower gate metal using a first gas, the lower gate metal burying at least a portion of the trench, forming a barrier metal on the lower gate metal, on the barrier metal, forming an upper gate metal using a second gas different from the first gas and forming a capping film on the gate metal, the capping film filling the trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.