Magnetic memory
US10103199B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 31, 2017 |
| Grant date | Oct 16, 2018 |
| Priority date | — |
| Expiry date | Jan 31, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C5/06
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic memory according to an embodiment includes: a conductive nonmagnetic layer including a first terminal, a second terminal, and a region between the first terminal and the second terminal; a magnetoresistive element including: a first magnetic layer; a second magnetic layer disposed between the region and the first magnetic layer; and a nonmagnetic intermediate layer disposed between the first magnetic layer and the second magnetic layer; a transistor including a third terminal, a fourth terminal, and a control terminal, the third terminal being electrically connected to the first terminal; a first wiring electrically connected to the first magnetic layer and the fourth terminal; a second wiring electrically connected to the control terminal; and a third wiring electrically connected to the second terminal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.