Semiconductor device and method for manufacturing semiconductor device
US10103232B2 · kind B2 · utility
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2References
10Claims
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Key dates
| Filing date | Aug 25, 2017 |
| Grant date | Oct 16, 2018 |
| Priority date | — |
| Expiry date | Aug 25, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device (100) includes a base layer (10), an interface layer (20), and a deposition layer (30). The base layer (10) includes a nitride semiconductor that contains gallium. The interface layer (20) is adjacent to the base layer (10). The interface layer (20) contains gallium oxide. The deposition layer (30) is adjacent to the interface layer (20). The deposition layer (30) has a wider band gap than the interface layer (20). The interface layer (20) preferably has crystallinity. The interface layer (20) preferably contains α-phase Ga2O3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.