Method for manufacturing oxide semiconductor film
US10103277B2 · kind B2 · utility
27Cited by
95References
18Claims
0Family size
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Key dates
| Filing date | Jul 13, 2017 |
| Grant date | Oct 16, 2018 |
| Priority date | — |
| Expiry date | Jul 13, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/80
Abstract
A method comprising a step of forming an oxide semiconductor film over a substrate by a sputtering method while heating the substrate at a temperature of higher than 200° C. and lower than or equal to 400° C. is provided. The oxide semiconductor film comprises a crystalline region and is in a non-single-crystal state. The step of forming the oxide semiconductor film is performed by using a sputtering target comprising indium, gallium, zinc and oxygen and a sputtering gas comprising at least one of a rare gas and oxygen.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.