Integrated gallium nitride power amplifier and switch
US10103696B1 · kind B1 · utility
10Cited by
4References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 13, 2017 |
| Grant date | Oct 16, 2018 |
| Priority date | — |
| Expiry date | May 2, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/254
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A multi-band RF power amplifier circuit fabricated using GaN technology includes a RF power amplifier coupled to a multi-band RF switch without an intervening impedance matching network between the RF power amplifier and the multi-band RF switch. The multi-band RF switch includes a plurality of Unit HEMT cells. In one IC package, the RF power amplifier, the multi-band RF switch, a controller for controlling the switch and all connection therebetween are totally contained within the IC package. In another IC package, the RF power amplifier and the multi-band RF switch are disposed on a single substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.