Integrated inertial sensing device
US10107625B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 24, 2017 |
| Grant date | Oct 23, 2018 |
| Priority date | — |
| Expiry date | Feb 24, 2037 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81B2201/0242
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A CMOS IC substrate can include sense amplifiers, demodulation circuits and AGC loop circuit coupled to the MEMS gyroscope. The AGC loop acts in a way such that generated desired signal amplitude out of the drive signal maintains MEMS resonator velocity at a desired frequency and amplitude. The system can include charge pumps to create higher voltages as required in the system. The system can incorporate ADC to provide digital outputs that can be read via serial interface such as I2C. The system can also include temperature sensor which can be used to sense and output temperature of the chip and system and can be used to internally or externally compensate the gyroscope sensor measurements for temperature related changes. The CMOS IC substrate can be part of a system which can include a MEMS gyroscope having a MEMS sensor overlying the CMOS IC substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.