Photosensitive resin composition and method for forming quantum dot pattern using the same
US10108089B2 · kind B2 · utility
8Cited by
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19Claims
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Key dates
| Filing date | Jun 23, 2014 |
| Grant date | Oct 23, 2018 |
| Priority date | — |
| Expiry date | Jun 28, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/30
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present disclosure provides a photosensitive resin composition and a method for forming a quantum dot pattern using the same. The photosensitive resin composition includes quantum dots which are dispersed in the photosensitive resin composition and each has a modification layer. The method for forming a quantum dot pattern includes coating, exposing and developing a photoresist to obtain the quantum dot pattern, wherein the photoresist is the above-mentioned photosensitive resin composition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.