Ferroelectric memory device
US10109350B2 · kind B2 · utility
5Cited by
3References
21Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 29, 2016 |
| Grant date | Oct 23, 2018 |
| Priority date | — |
| Expiry date | Jul 29, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/2275
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In one embodiment, a device is described for using ferroelectric material in a memory cell. In another embodiment, a method of operating a ferroelectric memory cell is described. Other embodiments are likewise described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.