Sputtering target
US10109468B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jun 26, 2015 |
| Grant date | Oct 23, 2018 |
| Priority date | — |
| Expiry date | Jun 26, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3467
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A target, in particular a sputtering target, includes a target plate of a brittle material and a back plate. The back plate is connected to the target plate over an area and the target plate has micro cracks which pass through from the front side to the rear side of the target plate and divide the target plate into adjacent fragments. A process is also provided for producing such a target which is suitable, in particular, for the use of extremely high power densities. A vacuum coating process uses at least one such target as a sputtering target and as a result particularly high power densities can be used on the target during the sputtering.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.