Chamber cleaning and semiconductor etching gases
US10109496B2 · kind B2 · utility
0Cited by
2References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 22, 2014 |
| Grant date | Oct 23, 2018 |
| Priority date | — |
| Expiry date | Dec 22, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to fluoroolefin compositions useful as gases for CVD semiconductor manufacture, particularly for etching applications including methods for removing surface deposits from the interior of a chemical vapor deposition chamber by using an activated gas mixture, and methods for etching the surface of a semiconductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.