Structure and method for improving high voltage breakdown reliability of a microelectronic device
US10109574B1 · kind B1 · utility
5Cited by
6References
21Claims
0Family size
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Key dates
| Filing date | Apr 4, 2017 |
| Grant date | Oct 23, 2018 |
| Priority date | — |
| Expiry date | Apr 4, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/48463
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and structure for improving high voltage breakdown reliability of a microelectronic device, e.g., a galvanic digital isolator, involves providing an abatement structure around metal plate corners of a high voltage isolation capacitor to ameliorate the effects of an electric field formed thereat during operation of the device due to dielectric discontinuity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.