Semiconductor device
US10109982B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 7, 2017 |
| Grant date | Oct 23, 2018 |
| Priority date | — |
| Expiry date | Feb 7, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/4031
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor device includes: a semiconductor layered structure including an active layer, a first region including a part of the active layer and extending in a layered direction, a second region including at least a part of an end portion of the active layer and extending in the layered direction, disordering of the second region being higher than the first region, and a third region including a portion of the active layer between the first region and the second region and extending in the layered direction, disordering of the third region being higher than the first region and lower than the second region; and an electrode configured to inject an electric current to the active layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.