Grounding scheme for power converters with silicon carbide MOSFETs
US10110149B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 6, 2017 |
| Grant date | Oct 23, 2018 |
| Priority date | — |
| Expiry date | Jan 6, 2037 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/72
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Systems and methods for grounding power generation systems with silicon carbide MOSFET power converters are provided. A power generation system can include a power generator comprising a multiphase rotor configured to generate multiphase alternating current power at a first voltage and a power converter comprising one or more silicon carbide MOSFETs and an isolation transformer. The power converter can be configured to convert the multiphase alternating current power from the power generator at the first voltage to multiphase alternating current power at a second voltage. The power generation system can be electrically grounded to shunt a leakage current associated with the isolation transformer of the power converter to a ground.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.