Semiconductor device
US10112822B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Feb 16, 2017 |
| Grant date | Oct 30, 2018 |
| Priority date | — |
| Expiry date | Feb 28, 2037 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2203/035
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A semiconductor device includes a first substrate, a second substrate, an anti-stiction layer and at least one metal layer. The first substrate includes a microelectromechanical systems (MEMS) structure. The second substrate is bonded to the first substrate and disposed over the MEMS structure. The second substrate comprises at least one through hole. The anti-stiction layer is disposed on a surface of the MEMS structure. The at least one metal layer is disposed over the second substrate and covers the at least one through hole of the second substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.