Temperature sensor and method for producing same
US10113919B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 22, 2013 |
| Grant date | Oct 30, 2018 |
| Priority date | — |
| Expiry date | May 17, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01C1/148
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Provided are a temperature sensor that is hard to increase resistance in the electrode structure with respect to a Ti—Al—N thermistor material layer even under a high-temperature environment, and has a high reliability with a high heat resistance as well as a method for producing the same. The temperature sensor includes an insulation substrate; a thin film thermistor portion formed on the insulation substrate; and a pair of pattern electrodes formed on the insulation substrate with a pair of opposed electrode portions being arranged so as to be opposed to each other on the thin film thermistor portion, wherein the thin film thermistor portion is made of a Ti—Al—N thermistor material, and the pair of pattern electrodes has a Ti—N bonding layer formed on the thin film thermistor portion and an electrode layer made of a noble metal formed on the bonding layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.