Spectrally and temporally engineered processing using photoelectrochemistry
US10115599B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 6, 2016 |
| Grant date | Oct 30, 2018 |
| Priority date | — |
| Expiry date | Mar 13, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/30617
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Methods and apparatus for subtractively fabricating three-dimensional structures relative to a surface of a substrate and for additively depositing metal and dopant atoms onto the surface and for diffusing them into the bulk. A chemical solution is applied to the surface of the semiconductor substrate, and a spatial pattern of electron-hole pairs is generated by projecting a spatial pattern of illumination characterized by a specified intensity, wavelength and duration at each pixel of a plurality of pixels on the surface. An electrical potential is applied across the interface of the semiconductor and the solution with a specified temporal profile relative to the temporal profile of the spatial pattern of illumination. Such methods are applied to the fabrication of a photodetector integral with a parabolic reflector, cell size sorting chips, a three-dimensional photonic bandgap chip, a photonic integrated circuit, and an integrated photonic microfluidic circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.