Patent · US Active

Semiconductor device

US10115684B2 · kind B2 · utility

5Cited by
3References
18Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 3, 2017
Grant dateOct 30, 2018
Priority date
Expiry dateFeb 3, 2037

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/3511
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor device includes a first semiconductor chip including a first plurality of wiring layers, and a first coil, a first bonding pad, and first dummy wires formed in an uppermost layer of the first plurality of the wiring layers, and a second semiconductor chip including a second plurality of wiring layers, a second coil, a second bonding pad, and second dummy wires formed in an uppermost layer of the second plurality of the wiring layers. The first semiconductor chip and the second semiconductor chip face each other via an insulation sheet. The first coil and the second coil are magnetically coupled with each other.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.