CMOS image sensor
US10115759B2 · kind B2 · utility
5Cited by
5References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 12, 2017 |
| Grant date | Oct 30, 2018 |
| Priority date | — |
| Expiry date | Jul 12, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/811
Abstract
A complementary metal-oxide semiconductor (CMOS) image sensor includes a device isolation layer provided in a trench of a substrate, the device isolation layer defining a pixel; and a photoelectric conversion device provided in the pixel. The device isolation layer includes a conductive layer, a tunneling layer interposed between the conductive layer and the substrate, and a trap layer interposed between the tunneling layer and the conductive layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.