Semiconductor devices
US10115806B2 · kind B2 · utility
2Cited by
5References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 26, 2016 |
| Grant date | Oct 30, 2018 |
| Priority date | — |
| Expiry date | May 26, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53295
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a substrate with lower structures, an insulation layer covering the lower structures on the substrate, a contact hole through the insulation layer partially exposing the substrate, and a contact structure contacting the substrate through the contact hole, the contact structure including a barrier pattern having an upper barrier on an upper portion of a sidewall of the contact hole, and a lower barrier filling a lower portion of the contact hole, and a conductive contact pattern filling an upper portion of the contact hole defined by the upper barrier and the lower barrier.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.