Field-effect transistor, display element, image display device, and system
US10115828B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 27, 2016 |
| Grant date | Oct 30, 2018 |
| Priority date | — |
| Expiry date | Nov 17, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/123
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A field-effect transistor including: a gate electrode; a source electrode and a drain electrode; an active layer disposed to be adjacent to the source electrode and the drain electrode and including a n-type oxide semiconductor; and a gate insulating layer disposed between the gate electrode and the active layer, wherein the n-type oxide semiconductor undergoes substitutional doping with at least one dopant selected from divalent, trivalent, tetravalent, pentavalent, hexavalent, heptavalent, and octavalent cations, valence of the dopant is greater than valence of a metal ion constituting the n-type oxide semiconductor, provided that the dopant is excluded from the metal ion, and the source electrode and the drain electrode include a material selected from Au, Pt, and Pd and alloys including at least any one of Au, Pt, and Pd, in at least contact regions of the source electrode and the drain electrode with the active layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.