Method for forming a virtual germanium substrate using a laser
US10115854B2 · kind B2 · utility
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16Claims
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Key dates
| Filing date | Sep 4, 2015 |
| Grant date | Oct 30, 2018 |
| Priority date | — |
| Expiry date | Sep 4, 2035 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
The present disclosure provides a method of manufacturing a semiconductor device. Furthermore the present disclosure provides a photovoltaic device and a light emitting diode manufactured in accordance with the method. The method comprises the steps of forming a germanium layer using deposition techniques compatible with high-volume, low-cost manufacturing, such as magnetron sputtering, and exposing the germanium layer to laser light to reduce the amount of defects in the germanium layer. After the method is performed the germanium layer can be used as a virtual germanium substrate for the growth of III-V materials.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.