Light emitting diode and fabrication method thereof
US10115858B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 15, 2018 |
| Grant date | Oct 30, 2018 |
| Priority date | — |
| Expiry date | Jan 15, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a light emitting diode includes providing a substrate, and forming successively an N-type layer, an active layer, an electronic blocking layer, and a P-type layer over the substrate. The P-type layer includes a Mg-doped GaN material layer having a Mg impurity concentration of about 2×1019-2×1020 cm−3; and has a thickness of less than or equal to about 250 Å, and has a surface density of V-type defects of less than or equal to about 5×106 cm−2. Through these optimized growth conditions for the P-type layer, the light absorption of the P-type layer can be reduced, the electric leakage due to the relatively large density of V-type defects on the surface can be reduced, and the anti-static capacity of the light emitting diode fabricated thereby can be improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.