Light emitting diode and fabrication method thereof

US10115861B2 · kind B2 · utility

Assignee

• Xiamen Sanan Optoelectronics Technology Co., Ltd. · CN

Inventors

• Guanying HUANG · Xiamen, CN
• Chun-Yi Wu · New Taipei, TW
• Chaoyu WU · Xiamen, CN
• Duxiang WANG · Xiamen, CN

Key dates

• Filing date: Aug 2, 2017
• Grant date: Oct 30, 2018
• Expiry date: Aug 2, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/832

Abstract

A light-emitting diode includes: an epitaxial-laminated layer having from bottom up: an n-type ohmic contact layer, a first n-type transition layer, an n-type etching-stop layer, a second n-type transition layer, an n-type confinement layer, an active layer, a p-type confinement layer, a p-type transition layer and a p-type window layer; a p electrode on the upper surface of the p-type window layer; a metal bonding layer over the bottom surface of the n-type ohmic contact layer, wherein, the portion corresponding to the p electrode position extends upwards and passes through the n-type ohmic contact layer and the first n-type transition layer, till the n-type etching-stop layer, thereby forming a current distribution adjustment structure such that the injected current would not flow towards the epitaxial-laminated layer right below the p electrode; and a conductive substrate over the bottom surface of the metal bonding layer.