Optoelectronic semiconductor chip

US10115867B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Markus Maute · Alteglofsheim, DE
• Karl Engl · Niedergebraching, DE
• Sebastian Taeger · Bad Abbach, DE
• Robert Walter · Parsberg, DE
• Johannes Stocker · Birkenfeld, DE

Key dates

• Filing date: Jul 14, 2017
• Grant date: Oct 30, 2018
• Expiry date: Jul 14, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/835

Abstract

An optoelectronic semiconductor chip is disclosed. In an embodiment the optoelectronic semiconductor chip includes a semiconductor body of semiconductor material, a p-contact layer and an n-contact layer. The semiconductor body includes an active layer intended for generating radiation. The semiconductor body includes a p-side and an n-side, between which the active layer is arranged. The p-contact layer is intended for electrical contacting the p-side. The n-contact layer is intended for electrical contacting the n-side 1b. The n-contact layer contains a TCO layer and a mirror layer, the TCO-layer being arranged between the n-side of the semiconductor body and the mirror layer.