Patent · US Active

Optoelectronic semiconductor component and method for producing same

US10115871B2 · kind B2 · utility

4Cited by

3References

16Claims

0Family size

Assignee

OSRAM Opto Semiconductors GmbH · DE

Inventors

Alexander Linkov · Regensburg, DE
Siegfried Herrmann · Neukirchen, DE

Key dates

Filing date	Dec 16, 2015
Grant date	Oct 30, 2018
Priority date	—
Expiry date	Jan 5, 2036

Classification

Technology area (CPC H)Electricity
CPC primaryH10H20/857
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

An optoelectronic semiconductor component and a method for producing the same are disclosed. In an embodiment the semiconductor component includes a semiconductor chip, which emits electromagnetic radiation of a first wavelength range from a radiation emission surface. The semiconductor component further includes a first conversion layer located on a lateral flank of the semiconductor chip, wherein the first conversion layer is suitable for converting electromagnetic radiation of the first wavelength range into electromagnetic radiation of a second wavelength range, and a second conversion layer located on the radiation emission surface of the semiconductor chip, wherein the second conversion layer is suitable for converting electromagnetic radiation of the first wavelength range into electromagnetic radiation of the second or of a third wavelength range. The first conversion layer is different from the second conversion layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.