Ferroelectric ceramics and method for manufacturing the same
US10115887B2 · kind B2 · utility
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18Claims
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Key dates
| Filing date | Nov 17, 2014 |
| Grant date | Oct 30, 2018 |
| Priority date | — |
| Expiry date | May 10, 2036 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12549
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
An aspect of the present invention relates to ferroelectric ceramics including a stacked film formed on a Si substrate, a Pt film formed on the stacked film, a SrTiO3 film formed on the Pt film, and a PZT film formed on the SrTiO3, wherein the stacked film is formed by repeating sequentially N times a first ZrO2 film and a Y2O3 film, and a second ZrO2 film is formed on the film formed repeatedly N times, the N being an integer of 1 or more. It is preferable that a ratio of Y/(Zr+Y) of the stacked film is 30% or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.