Method for manufacturing crystal film
US10115888B2 · kind B2 · utility
0Cited by
5References
8Claims
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Key dates
| Filing date | Feb 28, 2017 |
| Grant date | Oct 30, 2018 |
| Priority date | — |
| Expiry date | Feb 28, 2037 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/266
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for manufacturing a crystal film including: forming a Zr film on a substrate heated to 700° C. or more by a vapor deposition method using a vapor deposition material having a Zr single crystal; forming a ZrO2 film on said Zr film on a substrate heated to 700° C. or more, by a vapor deposition method using said vapor deposition material having a Zr single crystal, and oxygen; and forming a Y2O3 film on said ZrO2 film on a substrate heated to 700° C. or more, by a vapor deposition method using a vapor deposition material having Y, and oxygen.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.