Organic thin film transistor and method for making the same
US10115915B1 · kind B1 · utility
Assignees
Inventors
Key dates
| Filing date | Aug 28, 2017 |
| Grant date | Oct 30, 2018 |
| Priority date | — |
| Expiry date | Aug 28, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/221
- WIPO fieldOrganic fine chemistry
- WIPO sectorChemistry
Abstract
A method for forming an organic thin film transistor is provided. An interdigital electrode layer is located on a surface of the insulating substrate. An organic semiconductor layer is formed on a surface of the interdigital electrode layer. An insulating layer is located to cover the organic semiconductor layer. A gate electrode is formed on the insulating layer. A method for forming the organic semiconductor layer is provided. An evaporating source is provided, and the evaporating source and the interdigital electrode layer are spaced from each other. The carbon nanotube film structure is heated to gasify an organic semiconductor material to form the organic semiconductor layer on an interdigital electrode layer surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.