Doping engineered hole transport layer for perovskite-based device

US10115918B2 · kind B2 · utility

Assignee

• OKINAWA INSTITUTE OF SCIENCE AND TECHNOLOGY SCHOOL CORPORATION · JP

Inventors

• Yabing Qi · Motobu, JP
• Min-Cherl Jung · Motobu, JP
• Sonia Ruiz Raga · Motobu, JP

Key dates

• Filing date: Nov 5, 2015
• Grant date: Oct 30, 2018
• Expiry date: Nov 5, 2035

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50

Abstract

An optoelectronic device is provided, the device comprising an active layer comprising organometal halide perovskite and a hole transport layer (HTL) formed by vacuum evaporation and configured to transport hole carriers. The HTL includes a first sublayer comprising a hole transport material (HTM) doped with an n-dopant and disposed adjacent to the active layer, a second sublayer comprising the HTM that is undoped and disposed adjacent to the first sublayer, and a third sublayer comprising the HTM doped with a p-dopant and disposed adjacent to the second sublayer. The doping concentration of the n-dopant for the n-doped sublayer is determined to match the highest occupied molecular orbital energy level of the n-doped sublayer with the valence band maximum energy level of the perovskite active layer.