RF frontend having a wideband mm wave frequency doubler
US10116290B1 · kind B1 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 7, 2017 |
| Grant date | Oct 30, 2018 |
| Priority date | — |
| Expiry date | Dec 7, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03L7/183
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a frequency doubler circuit includes a first field effect transistor (FET) having a first gate, a first source, and a first drain and a second FET having a second gate, a second source, and a second drain, where the first gate of the first FET and the second source of the second FET are driven by an input signal in a first phase, and the first source of the first FET and the second gate of the second FET are driven by the input signal in a second phase, where the first and the second FETs are caused to switch based on the first phase and the second phase of the input signal respectively to generate an output signal at the first drain and the second drain having a frequency that is approximately double of the input signal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.