Semiconductor device
US10116302B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 16, 2018 |
| Grant date | Oct 30, 2018 |
| Priority date | — |
| Expiry date | Jan 16, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K2217/0081
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A high-side switching element is provided between a main output terminal having an intermediate potential and a high-side terminal. A signal transmission circuit includes a first point, a second point, a signal switching element, and a diode. The intermediate potential is applied to the first point. A referred potential between the low-side potential and the high-side potential is applied to the second point. The signal switching element has a first end connected to the first point and a second end, and is switched in accordance with a conversion signal. The diode is provided between the second point and the second end of the signal switching element and has a direction with which a forward current can flow by a voltage between the first point and the second point in a case where the intermediate potential is the low-side potential.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.