Thin film resistor
US10121575B2 · kind B2 · utility
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4References
10Claims
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Assignee
Inventor
Key dates
| Filing date | Nov 8, 2016 |
| Grant date | Nov 6, 2018 |
| Priority date | — |
| Expiry date | Jul 25, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01C17/12
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A thin film resistor includes 38-60 at.% of nickel, 10-25 at.% of chromium, 3-10 at.% of manganese, 4-18 at.% of yttrium, and 1-36 at.% of dysprosium. The thin film resistor can greatly increase the resistivity with a low temperature coefficient of resistance to broaden the applications of the thin film resistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.