Buffer layers having composite structures

US10121656B2 · kind B2 · utility

Assignee

• XIAMEN CHANGELIGHT CO., LTD. · CN

Inventors

• Kaixuan Chen · Xiamen, CN
• Wei Jiang · Xiamen, CN
• Zhiwei Lin · Xiamen, CN
• Xiangjing Zhuo · Xiamen, CN
• Tianzu Fang · Xiamen, CN
• Yang Wang · Nanhu, CN
• Jichu Tong · Xiamen, CN

Key dates

• Filing date: Feb 14, 2017
• Grant date: Nov 6, 2018
• Expiry date: Feb 14, 2037

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/50
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Disclosed is a wafer or a material stack for semiconductor-based optoelectronic or electronic devices that minimizes or reduces misfit dislocation, as well as a method of manufacturing such wafer of material stack. A material stack according to the disclosed technology includes a substrate; a basis buffer layer of a first material disposed above the substrate; and a plurality of composite buffer layers disposed above the basis buffer layer sequentially along a growth direction. The growth direction is from the substrate to a last composite buffer layer of the plurality of composite buffer layers. Each composite buffer layer except the last composite buffer layer includes a first buffer sublayer of the first material, and a second buffer sublayer of a second material disposed above the first buffer sublayer. The thicknesses of the first buffer sublayers of the composite buffer layers decrease along the growth direction.