Thin film capacitor and semiconductor device with improved heat dissipation
US10121728B2 · kind B2 · utility
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Key dates
| Filing date | Jul 22, 2016 |
| Grant date | Nov 6, 2018 |
| Priority date | — |
| Expiry date | Jul 22, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/19102
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention provides a thin film capacitor including a first electrode layer, a second electrode layer, and a dielectric layer provided between the first electrode layer and the second electrode layer, wherein a ratio (S/S0) of a surface area S of a surface of the first electrode layer on an opposite side to the dielectric layer to a projected area S0 in a thickness direction of the first electrode layer is 1.01 to 5.00.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.