Integrated circuits with high current capacity and methods for producing the same
US10121779B2 · kind B2 · utility
0Cited by
5References
20Claims
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Key dates
| Filing date | Dec 13, 2016 |
| Grant date | Nov 6, 2018 |
| Priority date | — |
| Expiry date | Jan 1, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/127
Abstract
Integrated circuits and methods of producing integrated circuits are provided. In an exemplary embodiment, an integrated circuit includes a source and a drain defined within a body isolation well. A gate overlies the body isolation well between the source and the drain, and an isolating structure is formed within the body isolation well. The isolating structure sections the source into a plurality of source sections with the plurality of source sections adjacent to one gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.