Semiconductor device having supporters and method of manufacturing the same
US10121793B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 29, 2016 |
| Grant date | Nov 6, 2018 |
| Priority date | — |
| Expiry date | Sep 4, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/34
Abstract
A semiconductor device includes storage electrodes on a substrate and one or more supporters configured to couple one or more portions of the storage electrodes. The semiconductor device may include multiple non-intersecting supporters extending in parallel to a surface of the substrate. At least one supporter may have an upper surface that is substantially coplanar with upper surfaces of the storage electrodes. The storage electrodes may include a capacitor dielectric layer that conformally covers one or more surfaces of the storage electrodes and one or more supporters. A storage electrode may include upper and lower storage electrodes coupled together. The upper and lower storage electrodes may have different horizontal widths.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.